JANTX2N6804 반도체 회로 부품 판매점
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)
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 International Rectifier |
PD - 90549C
IRF9130
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6804
JANTXV2N6804
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]
100V, P-CHANNEL
Product Summary
Part Number BVDSS
IRF9130 -100V
RDS(on) ID
0.30 Ω -11A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Units
-11
-7.0 A
-50
75 W
0.60
W/°C
±20 V
81 mJ
-11 A
7.5 mJ
-5.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
IRF9130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min Typ Max Units
-100 — — V
— -0.087 — V/°C
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
— — 0.30
— — 0.35 Ω
-2.0 — -4.0 V
3 — — S( )
— — -25
— — -250 µA
— — -100 nA
— — 100
VGS =-10V, ID =-7.0A➃
VGS =-10V, ID =-11A ➃
VDS = VGS, ID =-250µA
VDS >-15V, IDS =-7.0A➃
VDS=-80V, VGS=0V
VDS =-80V
VGS = 0V, TJ = 125°C
VGS =-20V
VGS =-20V
— — 29
— — 7.1 nC
— — 21
VGS =-10V, ID=-11A
VDS =-50V
— — 60
— — 140
ns
— — 140
VDD =-50V, ID =-11A,
RG =7.5Ω
— — 140
— 6.1 — nH Measured from the center of
drain pad to center of source
pad
— 860
— 350 —
— 125 —
pF
VGS = 0V, VDS =25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — -11
— — -50
A
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — -4.7 V
— — 250 nS
— — 3.0 µc
Tj = 25°C, IS =-11A, VGS = 0V ➃
Tj = 25°C, IF =-11A, di/dt ≤-100A/µs
VDD ≤-50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction-to-Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 1.67 °C/W
— — 30
Test Conditions
soldered to a 2” square copper-clad board
www.irf.com
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JANTX2N6804 mosfet
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