FDP6676 반도체 회로 부품 판매점
30V N-Channel Logic Level PowerTrench MOSFET
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 Fairchild Semiconductor |
April 2001
FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) .
Applications
• Synchronous rectifier
• DC/DC converter
.
Features
• 42 A, 30 V.
RDS(ON) = 6.0 mΩ @ VGS = 10 V
RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDP6676
FDP6676
Tube
FDB6676
FDB6676
13”
G
Ratings
30
± 16
84
240
93
0.48
-65 to +175
1.6
62.5
Tape width
n/a
24mm
S
Units
V
V
A
W
W°C
°C
°C/W
°C/W
Quantity
45
800 units
2000 Fairchild Semiconductor Corporation
FDP6676/FDB6676 Rev C(W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V,
ID = 20 A
370 mJ
IAR Maximum Drain-Source Avalanche
Current
20 A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 16 V,
VGS = –16 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
30
V
24 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1 1.5 3
V
ID = 250 µA, Referenced to 25°C –4.5 mV/°C
VGS = 10 V,
ID = 42 A
VGS = 4.5 V, ID = 39 A
VGS=10V, ID = 42 A, TJ=125°C
VGS = 10 V,
VDS = 5 V
VDS = 5 V,
ID = 42 A
4.3 6
4.9 7.5
7.0 11
60
141
mΩ
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
5324
841
384
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 42 A,
15 27
10 20
93 149
37 59
43 60
13
11
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
VGS = 0 V, IS = 42 A
Voltage
84
0.9 1.3
A
V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6676/FDB6676 Rev. C(W)
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FDP6676 mosfet
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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