FDP15N50 반도체 회로 부품 판매점
15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET
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 Fairchild Semiconductor |
August 2003
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced rDS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature
Package
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
Symbol
D
G
DRAIN
(BOTTOM)
TO-247
FDH SERIES
TO-263AB
FDB SERIES
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Pulsed1
Ratings
500
±30
15
11
60
PD
Power dissipation
Derate above 25oC
300
2
TJ, TSTG Operating and Storage Temperature
Soldering Temperature for 10 seconds
-55 to 175
300 (1.6mm from case)
Units
V
V
A
A
A
W
W/oC
oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (TO-247)
Thermal Resistance Junction to Ambient (TO-220, TO-263)
0.50
40
62
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
Package Marking and Ordering Information
Device Marking
FDH15N50
FDP15N50
FDB15N50
Device
FDH15N50
FDP15N50
FDB15N50
Package
TO-247
TO-220
TO-263
Reel Size
Tube
Tube
330mm
Tape Width
-
-
24mm
Quantity
30
50
800
Electrical Characteristics TJ = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Statics
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
rDS(ON)
VGS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ID = 250µA, VGS = 0V
Reference to 25oC,
ID = 1mA
VGS = 10V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 500V TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±30V
500
-
-
2.0
-
-
-
Dynamics
gfs
Qg(TOT)
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDD = 10V, ID = 7.5A
VGS = 10V,
VDS = 400V,
ID = 15A
VDD = 250V,
ID = 15A,
RG = 6.2Ω,
RD = 17Ω
VDS = 25V, VGS = 0V,
f = 1MHz
10
-
-
-
-
-
-
-
-
-
-
Avalanche Characteristics
EAS Single Pulse Avalanche Energy2
IAR Avalanche Current
760
-
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
showing the
integral reverse G
p-n junction diode.
D
S
ISD = 15A
ISD = 15A, diSD/dt = 100A/µs
ISD = 15A, diSD/dt = 100A/µs
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 7.0mH, IAS = 15A
-
-
-
-
-
Typ Max
-
0.58
0.33
3.4
-
-
-
-
-
0.38
4.0
25
250
±100
-
33
7.2
12
9
5.4
26
5
1850
230
16
-
41
10
16
-
-
-
-
-
-
-
--
- 15
-
-
0.86
470
5
15
60
1.2
730
6.6
Units
V
V/°C
Ω
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
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( fairchild )
FDP15N50 mosfet
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