FDD6690 반도체 회로 부품 판매점
N-Channel/ Logic Level/ PowerTrenchTM MOSFET
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 Fairchild Semiconductor |
July 2003
FDD6690A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V
RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
46
12
100
56
3.3
1.5
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6690A
FDD6690A
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corp.
FDD6690A Rev EW)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A
IAS Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 12 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15V,
VGS = 5 V
ID = 12 A,
Min Typ Max Units
180 mJ
12 A
30
24
V
mV/°C
1
±100
µA
nA
1 1.9 3
V
–5 mV/°C
7.7
9.9
11.4
50
47
12
14
19
mΩ
A
S
1230
325
150
1.5
pF
pF
pF
pF
10 19
7 13
29 46
12 21
13 18
3.5
5.1
ns
ns
ns
ns
nC
nC
nC
FDD6690A Rev. EW)
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FDD6690 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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