FDD5690 반도체 회로 부품 판매점
60V N-Channel PowerTrench MOSFET
|
|
 Fairchild Semiconductor |
June 1999
PRELIMINARY
FDD5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V
RDS(ON) = 0.032 Ω @ VGS = 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
D
D
G
G
S
TO-252
Absolute Maximum Ratings
TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to- Case
RθJA Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
S
Ratings
60
±20
30
9
100
50
3.2
1.3
-55 to +150
2.5
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5690
FDD5690
13’’
Tape width
16mm
1999 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
FDD5690, Rev. B
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 30 A
Maximum Drain-Source Avalanche Current
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 20V, VDS = 0 V
VGS = -20 V, VDS = 0 V
60
90 mJ
30 A
V
57 mV/°C
1 µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 9 A
VGS = 10 V, ID = 9 A, TJ = 125°C
VGS = 6 V, ID = 8 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 9 A
2 2.5
-6
4V
mV/°C
0.023
0.032
0.026
0.027
0.048
0.032
25
24
Ω
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
1110
150
75
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A
VGS = 10 V, RGEN = 6 Ω
VDS = 30 V, ID = 9 A
VGS = 10 V,
10 18 ns
9 18 ns
24 39 ns
10 18 ns
23 32 nC
4 nC
6.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 2.3 A
(Note 2)
Voltage
0.75
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
2.3
1.2
A
V
a) RθJA= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD5690, Rev. B
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Fairchild Semiconductor
( fairchild )
FDD5690 mosfet
데이터시트 다운로드 :
[ FDD5690.PDF ]
[ FDD5690 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
