FDD5614P 반도체 회로 부품 판매점
60V P-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
February 2001
FDD5614P
60V P-Channel PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V
RDS(ON) = 130 mΩ @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5614P
FDD5614P
13’’
S
G
D
Ratings
–60
±20
–15
–45
42
3.8
1.6
–55 to +175
3.5
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDD5614P Rev C(W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = –30 V,
IAR Maximum Drain-Source Avalanche
Current
Off Characteristics
ID = –4.5 A
BVDSS
∆BVDSS
∆TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –48 V,
VGS = 20V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –4.5 A
VGS = –4.5 V, ID = –3.9 A
VGS = –10 V,ID = –4.5 A,TJ=125°C
VGS = –10 V, VDS = –5 V
VDS = –5 V,
ID = –3 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –30 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –30V,
VGS = –10 V
ID = –4.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –3.2 A (Note 2)
Voltage
–60
–1
–20
–49
–1.6
4
76
99
137
8
759
90
39
7
10
19
12
15
2.5
3.0
–0.8
90 mJ
–4.5 A
V
mV/°C
–1
100
–100
µA
nA
nA
–3 V
mV/°C
100 mΩ
130
185
A
S
pF
pF
pF
14 ns
20 ns
34 ns
22 ns
24 nC
nC
nC
–3.2
–1.2
A
V
FDD5614P Rev C(W)
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제조업체: Fairchild Semiconductor
( fairchild )
FDD5614P mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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관련 데이터시트
FDD5614
60V P-Channel PowerTrench MOSFET - Fairchild Semiconductor
FDD5614P
60V P-Channel PowerTrench MOSFET - Fairchild Semiconductor