2SK2631 반도체 회로 부품 판매점
Ultrahigh-Speed Switching Applications
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 Sanyo Semicon Device |
Ordering number : ENN6600
2SK2631
N-Channel Silicon MOSFET
2SK2631
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance.
• Smaller amount of total gate charge.
Package Dimensions
unit : mm
2083B
[2SK2631]
6.5
5.0
4
2.3
0.5
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit : mm
2092B
6.5
5.0
4
[2SK2631]
2.3
0.5
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63000 TS IM TA-3024 No.6600-1/5
2SK2631
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
Forward Transfer Admittance
|yfs|
Static Drain-to-Source On-State Resistance RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Turn-ON Delay Time
Rise Time
td(on)
tr
Turn-OFF Delay Time
Fall Time
td(off)
tf
Diode Forward Voltage
VSD
Marking : K2631
ID=1mA, VGS=0
VDS=800V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
ID=0.5A, VGS=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, ID=1A, VGS=10V
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=1A, VGS=0
Switching Time Test Circuit
VIN
15V
0V
VIN
PW=1µs
D.C.≤0.5%
VDD=200V
ID=0.5A
RL=400Ω
D VOUT
G
2SK2631
P.G RGS
50Ω S
Ratings
800
±30
1
3
30
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
800
Ratings
typ
3.5
370 740
7.5
300
85
40
8
12
8
27
16
0.82
max
1.0
±100
5.5
10
1.2
Unit
V
mA
nA
V
ms
Ω
pF
pF
pF
nC
ns
ns
ns
ns
V
No.6600-2/5
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제조업체: Sanyo Semicon Device
( sanyo )
2SK2631 mosfet
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[ 2SK2631.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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