2SK1423 반도체 회로 부품 판매점
N-Channel Silicon MOSFET
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 Sanyo Semicon Device |
Ordering number:EN3561
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1423
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1423]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
123
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=60V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=50A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=50A, VGS=10V
(Note) Be careful in handling the 2SK1423 because it has no protection diode between gate and source.
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO3PB
Ratings
60
±20
80
320
150
2.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
60 V
100 µA
±100 nA
1.5 2.5 V
30 50
S
0.012 0.016 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52899TH (KT)/D151MK, (KOTO) X-6618, 8035 No.3561–1/4
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
2SK1423
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
ID=50A, VGS=10V, VDD=30V, RGS=50Ω
ID=50A, VGS=10V, VDD=30V, RGS=50Ω
ID=50A, VGS=10V, VDD=30V, RGS=50Ω
ID=50A, VGS=10V, VDD=30V, RGS=50Ω
IS=80A, VGS=0
Ratings
min typ max
Unit
4800
pF
2200
pF
600 pF
55 ns
345 ns
450 ns
400 ns
1.8 V
No.3561–2/4
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2SK1423 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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