SSFM2506 반도체 회로 부품 판매점
MOSFET ( Transistor )
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 Silikron |
Main Product Characteristics:
VDSS
25V
RDS(on) 4.1mohm(typ.)
ID 60A
TO-252 (D-PAK)
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSFM2506
Marking and pin Schematic diagram
Assignment
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely
low on resistance, fast switching speed and short reverse recovery time. These features combine to make this
design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other
applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
ISM
PD @TC = 25°C
PD @TC =100°C
VDS
VGS
dv/dt
EAS
EAR
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Pulsed Source Current (Body Diode)②
Power Dissipation③
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Peak diode recovery voltage
Single Pulse Avalanche Energy @ L=0.1mH②
Repetitive avalanche energy
Avalanche Current @ L=0.1mH②
Operating Junction and Storage Temperature Range
Max.
60
50
130
130
45
22
25
± 20
1.5
90
228
42
-55 to + 175
Units
A
W
W
V
V
V/nS
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 1 of 9
SSFM2506
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Min.
25
Typ.
—
Max.
—
Units
V
RDS(on)
Static Drain-to-Source
on-resistance
— 4.1
6
— 6.5 —
mΩ
VGS(th) Gate threshold voltage
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-to-Source leakage
current
Gate-to-Source forward
leakage
Gate-to-Source reverse
leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller")
charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Gate resistance
1.2 1.9 2.5
— 1.2 —
— — 10
— — 50
— — 100
-100
—
— 35.8
— 3.8
— 13.1
— 10.5
— 65.7
— 27.0
— 8.2
— 1732
— 512
— 323
—
40
6
15
—
—
—
—
—
—
—
— 1.4 —
V
μA
nA
nC
ns
pF
Ω
Value
2.5
13
36
Unit
℃/W
℃/W
℃/W
Conditions
VGS = 0V, ID = 250μA
VGS=10V
ID = 30A
TJ = 125℃
VDS = VGS,
ID = 250μA
TJ = 125℃
VDS = 25V,
VGS = 0V
VDS = 25V, VGS = 0V,
TJ = 55°C
VGS =20V
VGS = -20V
ID = 30A,
VDS=12.5V,
VGS = 10V
VGS=10V, VDS=12.5V,
RL=0.42Ω,
RGEN=3Ω
VGS = 0V,
VDS = 12.5V,
ƒ = 1.0MHz
VGS=0V,VDS=0V,
f=1MHz
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 2 of 9
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제조업체: Silikron
( silikron )
SSFM2506 mosfet
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국내 전력반도체 판매점
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