HCH20NT60V 반도체 회로 부품 판매점
N-Channel MOSFET
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 SemiHow |
Apr 2014
HCH20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V
RDS(on) typ = 0.17 ȍ
ID = 20 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 54 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.17 ȍ 7\S #9GS=10V
100% Avalanche Tested
RoHS Compliant
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
20
12.5
60
ρ30
500
10
1
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
208
0.67
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.6
62
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͲΡΣ͑ͣͥ͑͢͡
Package Marking and Ordering Information
Device Marking
HCH20NT60V
HCH20NT60V
Week Marking
YWWX
YWWXg
Package
TO-3P
TO-3P
Packing
Tube
Tube
Quantity
30
30
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 10 A
VDS = 30 V, ID = 10 A͑
2.5
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = ρ20 V, VDS = 0 V
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 20 A,
RG = 25
(Note 4,5)
VDS = 480V, ID = 20 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 20 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=10mH, IAS=10A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD$, di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
Typ Max Units
-- 3.5
0.17 0.19
18.8 --
V
΄͑
-- -- V
-- 1 Ꮃ
-- 10 Ꮃ
-- ρ100 Ꮂ
2140
300
18
2780
390
23.5
Ꮔ
Ꮔ
Ꮔ
40 90
110 230
310 630
110 230
54 70
10 --
20 --
Ꭸ
Ꭸ
Ꭸ
Ꭸ
nC
nC
nC
-- 20
-- 60
-- 1.2
440 --
5 --
A
V
Ꭸ
ȝ&
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͲΡΣ͑ͣͥ͑͢͡
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