SSM2314GN 반도체 회로 부품 판매점
N-channel Enhancement-mode Power MOSFET
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 Silicon Standard |
SSM2314GN
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
DESCRIPTION
D
G
S
BV DSS
R DS(ON)
ID
D
The SSM2314GN is in a SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount applications. This device is
suitable for low-voltage applications such as DC/DC converters and and
general switching applications.
SOT-23-3
20V
75mΩ
3.5A
S
G
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJA
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
20
± 12
3.5
2.8
10
1.38
0.01
-55 to 150
-55 to 150
Value
90
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
4/16/2005 Rev.2.1
www.SiliconStandard.com
1 of 5
SSM2314GN
ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=5V, ID=3A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±12V
ID=3A
VDS=16V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω , VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
20 -
-V
- 0.02 - V/°C
- - 75 mΩ
- - 125 mΩ
0.5 - 1.2 V
-7-S
- - 1 uA
- - 10 uA
- - ±100 nA
- 4 7 nC
- 0.7 - nC
- 2 - nC
- 6 - ns
- 8 - ns
- 10 - ns
- 3 - ns
- 230 370 pF
- 55 - pF
- 40 - pF
- 1.1 1.7 Ω
Min. Typ. Max. Units
- - 1.2 V
- 16 - ns
- 8 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle <2%.
3.Surface-mounted on 1 in2 copper pad on FR4 board , t < 10sec ; 270°C/W when mounted on minimum copper pad.
4/16/2005 Rev.2.1
www.SiliconStandard.com
2 of 5
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SSM2314GN mosfet
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