SLP65R300SJ 반도체 회로 부품 판매점
N-Channel MOSFET
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 Maple Semiconductor |
SLP65R300SJ / SLF65R300SJ
650V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 15A, 650V, RDS(on) typ. = 0.27Ω@VGS = 10 V
- Low gate charge ( typical 43nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP65R300SJ SLF65R300SJ
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
650
15 15 *
9.4 9.4 *
45 45 *
±30
110
2.1
0.32
5.0
156 34
1.67
0.3
-55 to +150
300
* Drain current limited by maximum junction temperature.
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLP65R300SJ
0.6
0.5
62
SLF65R300SJ
3.6
--
80
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013
Electrical Characteristics
Symbol
Parameter
Off Characteristics
TC = 25°C unless otherwise noted
Test Conditions
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 uA
△BVDSS Breakdown Voltage Temperature
/ △TJ Coefficient
ID = 250 uA, Referenced to 25℃
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VDS = 650 V, VGS = 0 V
VDS = 480 V, TC = 125℃
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 7.5 A
VDS = 40 V, ID = 7.5 A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
VDD = 400 V, ID = 6.5A,
RG = 20 Ω
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 480 V, ID = 6.5 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = 6.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=50mL, IAS = 2.1A, VDD = 150V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤10A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Min
650
--
--
--
--
--
2.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Units
-- -- V
0.6 -- V/℃
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
-- 4.5
0.27 0.30
16 --
V
Ω
S
800 -- pF
180 -- pF
8 -- pF
13
11
100
12
43
5
22
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
-- 12 A
-- 40 A
-- 1.5 V
345 -- ns
4.5 -- uC
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013
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SLP65R300SJ mosfet
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