SLP4N60C 반도체 회로 부품 판매점
N-Channel MOSFET
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 Maple Semiconductor |
SLP4N60C / SLF4N60C
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 4.5A, 600V, RDS(on)typ. = 2Ω@VGS = 10 V
- Low gate charge ( typical 14nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP4N60C
SLF4N60C
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
600
4.5 4.5 *
2.7 2.7 *
18 18 *
±30
170
4.5
12.7
4.5
127 36
1.0 0.29
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLP4N60C
1.0
0.5
62.5
SLF4N60C
3.5
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 January . 2013
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 uA
△BVDSS Breakdown Voltage Temperature
/ △TJ Coefficient
ID = 250 uA, Referenced to 25℃
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125℃
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 2.25 A
VDS = 40 V, ID = 2.25 A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 4.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 4.5 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = 4.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD £ 4.5A, di/dt £ 200A/us, VDD £ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width £ 300us, Duty cycle £ 2%
5. Essentially independent of operating temperature
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.6
--
--
--
--
--
2.0
4.7
490
17
9
11.5
12
47.5
19.5
14
3
5.5
--
--
--
310
1.8
Max Units
-- V
-- V/℃
1
10
100
-100
uA
uA
nA
nA
4.0 V
2.5 Ω
-- S
-- pF
-- pF
-- pF
-- ns
-- ns
-- ns
-- ns
-- nC
-- nC
-- nC
5A
20 A
1.4 V
-- ns
-- uC
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 January . 2013
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SLP4N60C mosfet
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