RU6Z12P 반도체 회로 부품 판매점
N-Channel Advanced Power MOSFET
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 Ruichips |
RU6Z12P
N-Channel Advanced Power MOSFET
Features
• 650V/12A,
RDS (ON) =340mΩ(Typ.)@VGS=10V
• Ultra Low Rdson
• Fast Switching
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• AC/DC Power Conversion in Switched Mode Power Supplies
(SMPS)
• Adapter
• LED driver
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
G DS TO220F
D
G
S
N-Channel MOSFET
Rating
Unit
TC=25°C
650
±30
150
-55 to 150
12
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
48 A
12
A
7.5
24
W
9.5
5.3 °C/W
62.5 °C/W
100 mJ
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2017
1
www.ruichips.com
RU6Z12P
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU6Z12P
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS
Zero Gate Voltage Drain Current VDS=650V, VGS=0V
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±30V, VDS=0V
RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=6A
Diode Characteristics
650
1
30
24
±100
340 400
VSD④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=12A, VGS=0V
ISD=12A, dlSD/dt=100A/µs
1.2
230
2.4
Dynamic Characteristics⑤
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics⑤
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=300V,
Frequency=1.0MHz
VDD=300V, RL=25Ω,
IDS=12A, VGEN=10V,
RG=25Ω
4.7
530
78
16
19
31
41
23
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=520V, VGS=10V,
IDS=12A
16
4
7
Unit
V
µA
V
nA
mΩ
V
ns
µC
Ω
pF
ns
nC
Notes:
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, IAS =4.5A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2017
2
www.ruichips.com
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RU6Z12P mosfet
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