RU75240R 반도체 회로 부품 판매점
N-Channel Advanced Power MOSFET
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 Ruichips |
RU75240R
N-Channel Advanced Power MOSFET
Features
• 75V/240A,
RDS (ON) =2.6mΩ(Typ.)@VGS=10V
• Reliable and Rugged
• Ultra Low On-Resistance
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Uninterruptible Power Supplies
• Synchronus Rectification in DC/DC and AC/DC Converters
Pin Description
GDS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
75
±25
175
-55 to 175
240
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
720 A
240
A
168
394
W
197
0.38 °C/W
62.5 °C/W
900 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2016
1
www.ruichips.com
RU75240R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU75240R
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS
Zero Gate Voltage Drain Current VDS=75V, VGS=0V
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=75A
Diode Characteristics
75
1
30
24
±100
2.6 3.5
VSD④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=75A, VGS=0V
ISD=20A, dlSD/dt=100A/µs
1.2
35
375
Dynamic Characteristics⑤
RG Gate Resistance
Ciss Input Capacitance
Coss
Crss
td(ON)
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
tr
td(OFF)
tf
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Gate Charge Characteristics⑤
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V,IDS=75A,
VGEN=10V,RG=2.5Ω
1.3
8250
1350
920
38
142
198
61
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=60V, VGS=10V,
IDS=20A
235
31
168
Unit
V
µA
V
nA
mΩ
V
ns
nC
Ω
pF
ns
nC
Notes:
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =60A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2016
2
www.ruichips.com
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RU75240R mosfet
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