SM2054NSV 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 Sinopower |
SM2054NSV
Features
· 20V/7.5A,
RDS(ON)= 23.5mW(max.) @ VGS= 10V
RDS(ON)= 27mW(max.) @ VGS= 4.5V
RDS(ON)= 42mW(max.) @ VGS= 2.5V
· Reliable and Rugged
· ESD Protection
· Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
G
D
S
Top View SOT-223
D (2)
Applications
G(1)
· Switching Regulators
· Switching Converters
S (3)
N-Channel MOSFET
Ordering and Marking Information
SM2054NS
SM2054NS V:
Assembly Material
Handling Code
Temperature Range
Package Code
2054N
XXXXX
Package Code
V : SOT-223
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - October, 2013
1
www.sinopowersemi.com
SM2054NSV
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Sym bol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12 V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TA=25°C
4A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
7.5 A
6
30 A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
3.5 W
2.2
RqJA c Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
35 °C/W
70 °C/W
IAS b Avalanche Current, Single pulse
L=0.1mH
10 A
EAS b Avalanche Energy, Single pulse
L=0.1mH
5 mJ
Note a：Pulse width limited by maximum junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Surface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - October, 2013
2
www.sinopowersemi.com
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SM2054NSV mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SM2054NSD
N-Channel Enhancement Mode MOSFET - Sinopower
SM2054NSV
N-Channel Enhancement Mode MOSFET - Sinopower