SM2202NSQG 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
|
|
 Sinopower |
SM2202NSQG
Features
• 30V/8.4A,
RDS(ON) = 15.5mΩ(max.) @ VGS =10V
RDS(ON) = 21mΩ(max.) @ VGS =4.5V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• 100% UIS Tested
®
N-Channel Enhancement Mode MOSFET
Pin Description
DS
D
D
G
D
D
S
DFN2x2-6
(1,2,5,6)
DD DD
Pin 1
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(3)G
(4)S
N-Channel MOSFET
Ordering and Marking Information
SM2202NS
SM2202NS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
2202A
XXXXX
Package Code
QG : DFN2x2-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - November, 2014
1
www.sinopowersemi.com
SM2202NSQG
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID a
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=10V)
ID c
IDM a
IS a
IAS b
EAS b
TJ
TST G
PD a
Continuous Drain Current
Pulsed Drain Current (VGS=10V)
Diode Continuous Forward Current
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
PD Maximum Power Dissipation
TA=25°C
TA=70°C
TC =25°C
TC =100°C
L=0.5mH
L=0.5mH
TA=25°C
TA=70°C
TC =25°C
TC =100°C
30
±20
8.4
6.5
12
12
32
2
9
20.25
150
-55 to 150
1.66
1.06
13.8
5.5
V
A
mJ
°C
W
RθJA a Thermal Resistance-Junction to Ambient
t ≤ 10s
Steady State
40 °C/W
75
RθJC Thermal Resistance-Junction to Case
Note a：Surface Mounted on 1in2 pad area, t ≤ 10sec.
Steady State
9 °C/W
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Current limit by bonding wire.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - November, 2014
2
www.sinopowersemi.com
|
PDF 파일 내의 페이지 : 총 13 페이지
제조업체: Sinopower
( sinopower )
SM2202NSQG mosfet
데이터시트 다운로드 :
[ SM2202NSQG.PDF ]
[ SM2202NSQG 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SM2202NSQE
N-Channel Enhancement Mode MOSFET - Sinopower
SM2202NSQG
N-Channel Enhancement Mode MOSFET - Sinopower