SM2030NSU 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 Sinopower |
SM2030NSU
®
N-Channel Enhancement Mode MOSFET
Features
· 20V/30A,
RDS(ON)= 20.5mW (Max.) @ VGS=4.5V
RDS(ON)= 29mW (Max.) @ VGS=2.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
Drain 4
2 3 Source
1 Gate
Top View of TO-252
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM2030NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2030NS U :
SM2030N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2013
1
www.sinopowersemi.com
SM2030NSU
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TST G
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
20
±12
150
-55 to 150
3
V
°C
A
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
30
19 A
40
27.8 W
11.1
RqJC Thermal Resistance-Junction to Case
4.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
9A
7
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.5 W
1.6
RqJ A c
IAS b
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
L=0.1mH
50 °C/W
13 A
EAS b Avalanche Energy, Single pulse
L=0.1mH
8.45 mJ
Note a：Max. current is limited by bonding wire.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Surface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2013
2
www.sinopowersemi.com
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( sinopower )
SM2030NSU mosfet
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[ SM2030NSU.PDF ]
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국내 전력반도체 판매점
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