SM2612NSC 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 Sinopower |
SM2612NSC
®
N-Channel Enhancement Mode MOSFET
Features
• 30V/5.5A,
RDS(ON)= 26.5mΩ(max.) @ VGS=10V
RDS(ON)= 35mΩ(max.) @ VGS=4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
S
D
D
G
D
D
Top View of SOT-23-6
(1,2,5,6)
DD DD
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
• Load Switch.
(3)G
(4)S
Ordering and Marking Information
N-Channel MOSFET
SM2612NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
C : SOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2612NS C : C12XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2014
1
www.sinopowersemi.com
SM2612NSC
®
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current
ID M
IS
TJ
TST G
Continuous Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD Maximum Power Dissipation
RθJA c Thermal Resistance-Junction to Ambient
IAS Avalanche Current, Single pulse
EAS Avalanche Energy, Single pulse
Note a：Surface Mounted on 1in2 pad area , t ≤ 10s.
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t ≤ 10s
Steady State
L=0.5mH
L=0.5mH
Rating
30
±20
5.5
4.5
22
3
150
-55 to 150
1.1
0.7
70
110
6
9
Unit
V
A
A
A
°C
W
°C/W
A
mJ
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2014
2
www.sinopowersemi.com
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SM2612NSC mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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