SM4832NSK 반도체 회로 부품 판매점
N-Channel Enhancement Mode MOSFET
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 Sinopower |
SM4832NSK
Features
· 30V/13A,
RDS(ON)= 9mW(max.) @ VGS= 10V
RDS(ON)= 13.5mW(max.) @ VGS= 4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DD DD
S
S
S
G
Top View of SOP-8
( 5,6,7,8 )
DD DD
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
(4)
G
S SS
(1, 2, 3)
N-Channel MOSFET
SM4832NS
SM4832NS K :
Assembly Material
Handling Code
Temperature Range
Package Code
4832
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500pcs/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - March, 2014
1
www.sinopowersemi.com
SM4832NSK
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
IDa
ID
a
M
ISa
I
b
AS
EASb
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=10V)
300ms Pulsed Drain Current (VGS=10V)
Diode Continuous Forward Current
Avalanche Current (Single Pulse)
Single Pulse Avalanche Energy (L=0.1mH)
TA=25°C
TA=70°C
30
±20 V
13
10
50 A
3
25
31 mJ
TJ
TST G
PDa
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Rq
a,c
JA
Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
t £ 10s
Steady State
150
-55 to 150
4.3
2.7
29
65
°C
W
°C/W
RqJL Thermal Resistance-Junction to Lead
Steady State
20
Note a：Surface Mounted on 1in2 pad area, t £ 10sec.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Maximum under Steady State conditions is 75 °C/W.
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSD a
trr b
Diode Forward Voltage
Reverse Recovery Time
Qrr b Reverse Recovery Charge
Test Conditions
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=17A
VGS=4.5V, IDS=12A
ISD=3A, VGS=0V
ISD=3A, dlSD/dt=100A/ms
SM4832NSK
Min. Typ. Max.
30 -
-
--1
- - 30
1.3 1.8 2.5
- - ±100
- 7.5 9
- 11.2 13.5
- 0.7 1.1
- 22 -
-9-
Unit
V
mA
V
nA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - March, 2014
2
www.sinopowersemi.com
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SM4832NSK mosfet
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