SM4050PSV 반도체 회로 부품 판매점
P-Channel Enhancement Mode MOSFET
|
|
 Sinopower |
SM4050PSV
Features
· -40V/-6.2A,
RDS(ON) = 45mW(max.) @ VGS =-10V
RDS(ON) = 68mW(max.) @ VGS =-4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
P-Channel Enhancement Mode MOSFET
Pin Description
G
D
S
Top View SOT-223
D
Applications
· Power Management in LCD/TV Inverter.
G
S
P-Channel MOSFET
Ordering and Marking Information
SM4050PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
V : SOT-223
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4050PS V :
SM4050P
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
1
www.sinopowersemi.com
SM4050PSV
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
Parameter
ID* Continuous Drain Current (VGS=-4.5V)
IDM*
IS*
TJ
TSTG
300ms Pulsed Drain Current (VGS=-4.5V)
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Notes：*Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C
TA=100°C
TA=25°C
TA=100°C
t £ 10s
Steady State
Rating
-40
±20
-6.2
-3.9
-24
-3.3
150
-55 to 150
3.1
1.3
40
100
Unit
V
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSD a
trr b
Qrr b
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
SM4050PSV
Min. Typ. Max.
VGS=0V, IDS=-250mA
VDS=-32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250mA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-6.2A
VGS=-4.5V, IDS=-3.9A
-40
-
-
-1.5
-
-
-
--
- -1
- -30
-2 -2.5
- ±100
36 45
50 68
ISD=-3.3A, VGS=0V
ISD=-6.2A,
diSD/dt=100A/ms
- -0.8 -1.3
- 21 -
- 17 -
Unit
V
mA
V
nA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2012
2
www.sinopowersemi.com
|
PDF 파일 내의 페이지 : 총 11 페이지
제조업체: Sinopower
( sinopower )
SM4050PSV mosfet
데이터시트 다운로드 :
[ SM4050PSV.PDF ]
[ SM4050PSV 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SM4050PSK
P-Channel Enhancement Mode MOSFET - Sinopower
SM4050PSV
P-Channel Enhancement Mode MOSFET - Sinopower