DMP2035UVTQ 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
DMP2035UVTQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on) max
35mΩ @ VGS = -4.5V
45mΩ @ VGS = -2.5V
ID
TA = +25°C
-6.0A
-5.2A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Motor Control
• Power management functions
• Analog Switch
Features and Benefits
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• ESD protected Up To 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Weight: 0.0013 grams (approximate)
Drain
TSOT26
D1
6D
D2
5D
Gate
ESD PROTECTED TO 3kV
Top View
G3
4S
Top View
Pin-Out
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMP2035UVTQ-7
DMP2035UVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q10x qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2035UVTQ
Document number: DS37400 Rev. 1 - 2
20P
20P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
July 2014
© Diodes Incorporated
DMP2035UVTQ
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 7) VGS = -2.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
-20
±12
-6.0
-4.8
-7.2
-5.7
-5.2
-4.1
-6.2
-4.9
-2.0
-24
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
106
74
2.0
65
46
11.8
-55 to 150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
BVDSS
-20
V
IDSS -1 µA
IGSS ±10 µA
Gate Threshold Voltage
VGS(th) -0.4 -0.7
-1.5
V
Gate Threshold Voltage Temperature Coefficient /△VGS(th) △TJ
2.5
mV/°C
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
23
30
41
18
-0.7
1610
157
145
9.4
15.4
2.5
3.3
17
12
94
42
14
4
35
45
62
-1.0
2400
210
200
14.1
23.1
33
19
150
64
25
8
mΩ
S
V
pF
Ω
nC
ns
ns
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP2035UVTQ
Document number: DS37400 Rev. 1 - 2
2 of 6
www.diodes.com
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250µA
ID = -250µA , Referenced to
+25°C
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -5.5A
VGS = 0V, IS = -1A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -10V, VGS = -4.5V
ID = -4A
VGS = -4.5V, VDS = -10V, RG = 6Ω,
ID = -1A, RL = 10Ω
IF =-4.5A, di/dt=100A/µS
July 2014
© Diodes Incorporated
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