파트넘버.co.kr DMN2075U 데이터시트 PDF


DMN2075U 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE MOSFET



Diodes 로고
Diodes
DMN2075U 데이터시트, 핀배열, 회로
DMN2075U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
Top View
G
S
Internal Schematic
D
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN2075U-7
Case
SOT-23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G22
G22 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
~
~
Feb
2
2015
C
2016
D
Mar Apr May
345
2017
E
Jun
6
2018
F
Jul
7
2019
G
Aug
8
2020
H
Sep Oct
9O
2021
I
Nov
N
2022
J
Dec
D
DMN2075U
Document number: DS31837 Rev. 5 - 2
1 of 6
www.diodes.com
October 2015
© Diodes Incorporated


DMN2075U 데이터시트, 핀배열, 회로
DMN2075U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Pulsed Drain Current (Note 6)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
Value
20
±8
4.2
3.4
27
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Symbol
PD
RθJA
TJ, TSTG
Value
0.8
156
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ
BVDSS
IDSS
IGSS
20
VGS(th)
RDS (ON)
|Yfs|
VSD
0.4
25
30
13
0.75
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
100
±100
1.0
38
45
1.0
Unit
Test Condition
V VGS = 0V, ID = 250μA
nA VDS = 16V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
S VDS = 5V, ID = 3.6A
V VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 10V,
nC ID = 3.6A
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 2.78Ω, RG = 1.0
ns
DMN2075U
Document number: DS31837 Rev. 5 - 2
2 of 6
www.diodes.com
October 2015
© Diodes Incorporated




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