RSD140P06FRA 반도체 회로 부품 판매점
MOSFET ( Transistor )
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 ROHM Semiconductor |
4V Drive Pch MOSFET
RRSSDD114400PP0066FRA
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Data Sheet
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RRSSDD114400PP060F6RA
Taping
TL
2500
○
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
*1 Pw≤10s, Duty cycle≤1%
*2 Tc=25C
Limits
60
20
14
28
14
28
20
150
55 to 150
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
6.25
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
RSD140P06FRA
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
60
-
1.0
-
-
-
10
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
60
73
77
-
1900
200
100
20
45
240
110
27
4.5
5.0
Max.
10
-
1
3.0
84
103
108
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=14A, VGS=10V
m ID=14A, VGS=4.5V
ID=-14A, VGS=-4.0V
S ID=14A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=7.0A, VDD 30V
ns VGS=10V
ns RL=4.3
ns RG=10
nC VDD 30V
nC ID=14A,
nC VGS=10V
Data Sheet
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=14A, VGS=0V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.08 - Rev.A
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RSD140P06FRA mosfet
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