RHP020N06FRA 반도체 회로 부품 판매점
4V Drive Nch MOSFET
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 ROHM Semiconductor |
4V Drive Nch MOSFET
RHP020N06 FRA
AEC-Q101 Qualified
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
zApplications
Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RHP020N06 FRA
Taping
T100
1000
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Gate
(2)Drain
(3)Source
(1) (2)
(3)
0.4 0.5 0.4
1.5 1.5
3.0
Abbreviated symbol : LR
0.4
zInner circuit
DRAIN
GATE
∗2
∗1
SOURCE
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Total power dissipation
PD
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board
Tch
Tstg
Limits
60
±20
±2
±8
2
8
500
2
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40 40 0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5
Unit
V
V
A
A
A
A
mW
W ∗2
°C
°C
Unit
°C/W
°C/W
∗
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٤c 2009 ROHM Co., Ltd. All rights reserved.
1/4
22001069..0063 --RReevv.A.A
RHP020N06 FRA
zElectrical characteristics (Ta=25qC)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Min.
−
60
−
1.0
−
−
−
2.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
150
200
240
−
140
50
40
7
10
22
18
7
1
2
Max.
±10
−
1
2.5
200
280
340
−
−
−
−
−
−
−
−
14
−
−
Unit Conditions
μA VGS= ±20V, VDS=0V
V ID= 1mA, VGS=0V
μA VDS= 60V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 2A, VGS= 10V
mΩ ID= 2A, VGS= 4.5V
mΩ ID= 2A, VGS= 4V
S VDS= 10V, ID= 2A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 30V
ns ID= 1A
VGS= 10V
ns RL=30Ω
ns RG=10Ω
nC VDD 30V
nC VGS= 10V
nC ID= 2A
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD − − 1.2 V
Conditions
IS= 2A, VGS=0V
Data Sheet
www.rohm.com
٤c 2009 ROHM Co., Ltd. All rights reserved.
2/4
22001069..0063 --RReevv.A.A
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RHP020N06FRA mosfet
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