ME4812B-G 반도체 회로 부품 판매점
N-Channel 30-V(D-S) MOSFET
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 Matsuki |
ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
FEATURES
● RDS(ON)≦12mΩ@VGS=10V
● RDS(ON)≦21mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Battery Powered System
● DC/DC Converter
● Load Switch
PIN CONFIGURATION
(SOP-8)
Top View
Ordering Information: ME4812B (Pb-free)
ME4812B-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25℃
Current( TJ =150℃)*
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation*
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
* The device mounted on 1in2 FR4 board with 2 oz copper
Limit
30
±20
11.4
9.1
46
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
℃
℃/W
JuDneec,, 22000190--VVeerr11..00
01
ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
RDS(ON)
Drain-Source On-State Resistance a
VGS=10V, ID= 11.2A
VGS=4.5V, ID= 8A
VSD Diode Forward Voltage
IS=1A, VGS=0V
DYNAMIC
Qg Total Gate Charge
VDS=15V, VGS=10V, ID=11.2A
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V, ID=11.2A
Qgd Gate-Drain Charge
Ciss Input capacitance
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1.0MHz
Crss
Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=0V, VGS=0V, f=1MHz
VDD=15V, RL =15Ω,
I=1A, VGEN=10V,
RG=3Ω
Min
30
1
Typ Max Unit
9.5
16
0.47
3
±100
0.1
12
21
0.55
V
V
nA
mA
mΩ
V
21
11
nC
5.0
4.6
865
295 pF
153
0.6 Ω
15
14
ns
41
4
Notes: a. pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
JuDneec,, 22000190--VVeerr11..00
02
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( matsuki )
ME4812B-G mosfet
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상호 : 아이지 인터내셔날
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