FCB290N80 반도체 회로 부품 판매점
MOSFET ( Transistor )
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 Fairchild Semiconductor |
March 2015
FCB290N80
N-Channel SuperFET® II MOSFET
800 V, 17 A, 0.29
Features
• RDS(on) = 0.259 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 58 nC)
• Low Eoss (Typ. 5.4 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D2-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
1
FCB290N80
800
±20
±30
17
10.8
42
882
3.4
2.12
100
20
212
1.7
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCB290N80
0.59
62.5
40
Unit
oC/W
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
FCB290N80
Top Mark
FCB290N80
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 1.7 mA
VGS = 10 V, ID = 8.5 A
VDS = 20 V, ID = 8.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 17 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
800
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 17 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 17 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 17 A,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 3.4 A, RG = 25 , starting TJ = 25C
3. ISD 17 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C
4. Essentially independent of operating temperature typical characteristic.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.85
-
-
-
-
0.259
20
2410
75
0.36
35
240
58
11
22
0.75
22
14
61
2.6
-
-
-
511
12
Max.
-
-
25
250
±10
4.5
0.290
-
3205
100
-
-
-
75
-
-
-
54
38
132
15
17
42
1.2
-
-
Unit
V
V/oC
A
A
V
S
pF
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
©2014 Fairchild Semiconductor Corporation
FCB290N80 Rev. 1.0
2
www.fairchildsemi.com
|
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FCB290N80 mosfet
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