HRLO48N06H 반도체 회로 부품 판매점
N-Channel Trench MOSFET
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 SemiHow |
Dec 2016
HRLO48N06H
60V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
DC/DC in Telecoms and Industrial
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
60
21
3.8
4.8
Unit
V
A
mΩ
mΩ
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TA = 25℃
TA = 100℃
Single Pulsed Avalanche Energy
L=1mH
Power Dissipation
TA = 25℃
TA = 70℃
Operating and Storage Temperature Range
60
±20
21
13
140
160
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJL Junction-to-Lead
Junction-to-Ambient (t≤10s)
RθJA
Junction-to-Ambient (steady state)
Typ.
--
--
--
Max.
23
40
75
Units
℃/W
℃/W
℃/W
◎ SEMIHOW REV.A0,December 2016
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 5 V, ID = 20 A
1.0
--
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂
VDS = 60 V, VGS = 0 V
VDS = 60 V, TJ = 100℃
VGS = ±20 V, VDS = 0 V
60
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
VDS = 30 V, ID = 20 A,
RG = 10 Ω
Qg (10V)
Qg (4.5V)
Qgs
Qgd
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 30 V, ID = 20 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 20 A, VR = 30 V
diF/dt = 300 A/μs
--
--
--
--
--
-- 3.0 V
3.8 4.8 mΩ
4.8 6.3 mΩ
58 --
S
-- -- V
-- 1 ㎂
-- 100 ㎂
-- ±100 ㎁
3250
1200
45
1.6
--
--
--
--
㎊
㎊
㎊
Ω
12 -- ㎱
10 -- ㎱
55 -- ㎱
15 -- ㎱
49 -- nC
24 -- nC
8 -- nC
9 -- nC
-- 21
-- 140
0.9 1.2
50 --
120 --
A
V
㎱
nC
◎ SEMIHOW REV.A0,December 2016
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HRLO48N06H mosfet
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