|
SemiHow |
Jan 2016
HRLF150N10K
100V N-Channel Trench MOSFET
FEATURES
BVDSS = 100 V
ID = 50 A
Unrivalled Gate Charge : 80 nC (Typ.)
Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V
Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V
100% Avalanche Tested
8DFN 5x6
1
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TC= 25
TA = 25
Operating and Storage Temperature Range
100
ρ20
50
32
110
190
74
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient (steady state)
Typ.
--
--
Max.
1.7
62
Units
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝ͻΒΟ͑ͣͧ͑͢͡
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 15 A
VDS = 5, ID = 20 A
1.0
--
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125
VGS = ρ20 V, VDS = 0 V
100
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 30 A,
RG = 6
VDS = 80 V, ID = 30 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
-- 2.4
13 15
14 20
50 --
-- --
-- 1
-- 100
-- ρ100
4000
290
150
1.2
--
--
--
--
30 --
30 --
180 --
25 --
80 --
10 --
15 --
-- 50
-- 110
-- 1.3
50 --
80 --
V
m
m
S
V
Ꮃ
Ꮃ
Ꮂ
Ꮔ
Ꮔ
Ꮔ
Ꭸ
Ꭸ
Ꭸ
Ꭸ
nC
nC
nC
A
V
Ꭸ
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=17A, VDD=25V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝ͻΒΟ͑ͣͧ͑͢͡
|