MRF9085S 반도체 회로 부품 판매점
RF POWER MOSFETs
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9085
MRF9085R3
MRF9085S
MRF9085SR3
MRF9085LS
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9085)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9085S, MRF9085LS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF9085
MRF9085S/MRF9085LSR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–181
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
(1) Part is internally input matched.
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Coss
Crss
Min
—
—
—
2.0
—
—
—
—
—
Typ
—
—
—
—
3.7
0.19
8.0
73
2.9
Max Unit
10 µAdc
1 µAdc
1 µAdc
4.0 Vdc
— Vdc
0.4 Vdc
—S
— pF
— pF
(continued)
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–182
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
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제조업체: Motorola Semiconductors
( motorola )
MRF9085S mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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