AUIRLS4030 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
|
|
 Infineon |
AUTOMOTIVE GRADE
Features
Optimized for Logic Level Drive
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche rat-
ing . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
AUIRLS4030
AUIRLSL4030
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
max
3.4m
4.3m
S ID
180A
DD
S
G
D2Pak
AUIRLS4030
G
Gate
D
Drain
S
D
G
TO-262
AUIRLSL4030
S
Source
Base part number
AUIRLSL4030
AUIRLS4030
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLSL4030
AUIRLS4030
AUIRLS4030TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b
21
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300(1.6mm from case)
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA Junction-to-Ambient (PCB Mount), D2 Pak
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-11-6
AUIRLS/SL4030
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS Drain-to-Source Leakage Current
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.10 ––– V/°C Reference to 25°C, ID = 5mA
–––
–––
3.4
3.6
4.3
4.5
m
VGS = 10V, ID = 110A
VGS = 4.5V, ID = 92A
1.0 ––– 2.5
V VDS = VGS, ID = 250µA
320 ––– ––– S VDS = 25V, ID = 110A
––– ––– 20
––– ––– 250
µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 16V
VGS = -16V
RG Internal Gate Resistance
––– 2.1 –––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 87 130
ID = 110A
–––
–––
27
45
–––
–––
nC
VDS = 50V
VGS = 4.5V
––– 42 –––
td(on) Turn-On Delay Time
––– 74 –––
tr Rise Time
––– 330 –––
td(off) Turn-Off Delay Time
––– 110 –––
tf Fall Time
––– 170 –––
Ciss Input Capacitance
––– 11360 –––
Coss Output Capacitance
––– 670 –––
Crss Reverse Transfer Capacitance
––– 290 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 760 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1140 –––
VDD = 65V
ns
ID = 110A
RG = 2.7
VGS = 4.5V
VGS = 0V
VDS = 50V
pF ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 80V
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
––– ––– 730
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3
––– 50 –––
––– 60 –––
––– 88 –––
––– 130 –––
––– 3.3 –––
V TJ = 25°C, IS = 110A, VGS = 0V
ns
nC
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
VR = 85V,
IF = 110A
di/dt = 100A/µs
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.05mH, RG = 25, IAS = 110A, VGS =10V. Part not recommended for use above this value.
ISD 110A, di/dt 1330A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
RJC value shown is at time zero.
2 2015-11-6
|
PDF 파일 내의 페이지 : 총 11 페이지
제조업체: Infineon
( infineon )
AUIRLS4030 mosfet
데이터시트 다운로드 :
[ AUIRLS4030.PDF ]
[ AUIRLS4030 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
AUIRLS4030
Power MOSFET ( Transistor ) - Infineon
AUIRLS4030
Power MOSFET ( Transistor ) - International Rectifier
AUIRLS4030-7P
Power MOSFET ( Transistor ) - Infineon
AUIRLS4030-7P
Power MOSFET ( Transistor ) - International Rectifier