AUIRLR120N 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Infineon |
AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
VDSS
RDS(on)
ID
AUIRLR120N
HEXFET® Power MOSFET
100V
max.
0.185
10A
D
G
Gate
S
G
D-Pak
AUIRLR120N
D
Drain
S
Source
Base part number
AUIRLR120N
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLR120N
AUIRLR120NTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
10
7.0
35
48
0.32
± 16
85
6.0
4.8
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
°C/W
2015-12-11
AUIRLR120N
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.185
VGS = 10V, ID = 6.0A
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.225 VGS = 5.0V, ID = 6.0A
––– ––– 0.265
VGS = 4.0V, ID = 5.0A
VGS(th)
gfs
IDSS
IGSS
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
3.1 ––– ––– S VDS = 25V, ID = 6.0A
–––
–––
–––
–––
25
250
µA
VDS = 100V, VGS = 0V
VDS = 80V,VGS = 0V,TJ =150°C
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = - 16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
––– ––– 20
ID = 6.0A
––– ––– 4.6 nC VDS = 80V
––– ––– 10
VGS = 5.0V, See Fig. 6 &13
––– 4.0 –––
VDD = 50V
–––
–––
35
23
–––
–––
ns
ID = 6.0A
RG = 11VGS = 5.0V
––– 22 –––
RD = 8.2,See Fig. 10
–––
–––
4.5
7.5
–––
–––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
––– 440 –––
VGS = 0V
––– 97 ––– pF VDS = 25V
––– 50 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
––– ––– 10
––– ––– 35
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C,IS = 6.0A, VGS = 0V
––– 110 160 ns TJ = 25°C ,IF = 6.0A
––– 410 620 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 4.7mH, RG = 25, IAS = 6.0A (See fig. 12)
ISD 6.0A, di/dt 340A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2 2015-12-11
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AUIRLR120N mosfet
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국내 전력반도체 판매점
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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