AUIRL1404L 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Infineon |
AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in Automotive and a wide variety of other applications.
AUIRL1404S
AUIRL1404L
HEXFET® Power MOSFET
VDSS
40V
RDS(on) max.
4.0m
ID 160A
DD
S
G
D2Pak
AUIRL1404S
S
GD
TO-262
AUIRL1404L
G
Gate
D
Drain
S
Source
Base part number
AUIRL1404L
AUIRL1404S
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRL1404L
AUIRL1404S
AUIRL1404STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RCS
RJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount), D2 Pak
Max.
160
110
640
3.8
200
1.3
± 20
520
95
20
5.0
-55 to + 175
300
Typ.
–––
0.50
–––
Max.
0.75
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-27
AUIRL1404S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 4.0 m VGS = 10V, ID = 95A
––– ––– 5.9
VGS = 4.3V, ID = 40A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
93 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
S VDS = 25V, ID = 95A
µA
VDS = 40V, VGS = 0V
VDS = 32V,VGS = 0V,TJ =150°C
nA
VGS
VGS
=
=
20V
-20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
––– ––– 140
––– ––– 48
––– ––– 60
––– 18 –––
––– 270 –––
––– 38 –––
––– 130 –––
LD Internal Drain Inductance
––– 4.5 –––
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 7.5 –––
––– 6600 –––
––– 1700 –––
––– 350 –––
––– 6700 –––
––– 1500 –––
––– 1500 –––
ID = 95A
nC VDS = 32V
VGS = 5.0V, See Fig. 6
VDD = 20V
ns
ID = 95A
RG= 2.5VGS = 4.5V
RD = 0.25
Between lead,
nH
6mm
from
(0.25in.)
package
and center of die contact
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
––– ––– 160
––– ––– 640
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3
––– 63 94
––– 170 250
V TJ = 25°C,IS = 95A,VGS = 0V
ns TJ = 25°C ,IF = 95A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.35mH, RG = 25, IAS = 95A, VGS =10V. (See fig.12)
ISD 95A, di/dt 160A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
This is applied to D2 Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994
2 2015-10-27
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( infineon )
AUIRL1404L mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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