AUIRFSL3107 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Infineon |
AUIRFS3107
AUTOMOTIVE GRADE
AUIRFSL3107
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
75V
2.5m
3.0m
230A
195A
DD
S
G
D2Pak
AUIRFS3107
G
Gate
S
GD
TO-262
AUIRFSL3107
D
Drain
S
Source
Base part number
AUIRFSL3107
AUIRFS3107
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL3107
AUIRFS3107
AUIRFS3107TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
230
160
195
900
370
2.5
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 20 V
300 mJ
See Fig.14,15, 22a, 22b
A
mJ
14 V/ns
-55 to + 175
°C
300
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount), D2 Pak
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
2015-10-20
AUIRFS/SL3107
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.09 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 2.5 3.0 m VGS = 10V, ID = 140A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance
230 ––– ––– S VDS = 50V, ID = 140A
RG Gate Resistance
IDSS Drain-to-Source Leakage Current
––– 1.2 –––
–––
–––
–––
–––
20
250
µA
VDS = 75V, VGS = 0V
VDS = 75V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS =
VGS =
20V
-20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 160 240
––– 38 –––
––– 54 –––
––– 106 –––
––– 19 –––
––– 110 –––
––– 99 –––
––– 100 –––
––– 9370 –––
––– 840 –––
ID = 140A
nC
VDS = 38V
VGS = 10V
VDD = 49V
ns
ID = 140A
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 50V
Crss Reverse Transfer Capacitance
––– 580 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss eff.(ER)
Effective Output Capacitance (Energy Related) ––– 1130 –––
VGS = 0V, VDS = 0V to 60V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
––– 1500 –––
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
–––
–––
––– 230
––– 900
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C,IS = 140A,VGS = 0V
–––
–––
54
60
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 64V
IF = 140A,
–––
–––
103
132
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs
––– 3.6 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.045mH, RG = 25, IAS = 140A, VGS =10V. Part not recommended for use above this value.
ISD 140A, di/dt 1380A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
RJC value shown is at time zero
2 2015-10-20
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AUIRFSL3107 mosfet
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국내 전력반도체 판매점
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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