ME4920-G 반도체 회로 부품 판매점
Dual N-Channel 30-V (D-S) MOSFET
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 Matsuki |
Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4920 is the N-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4920/ME4920-G
FEATURES
● RDS(ON)≦35 mΩ@VGS=10V
● RDS(ON)≦45 mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
e Ordering Information: ME4920 (Pb-free)
ME4920-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
30
±20
6
4.8
24
2
1.3
-55 to 150
62.5
The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
Apr,2012-Ver4.2
01
ME4920/ME4920-G
Dual N-Channel 30-V (D-S) MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
30
1
3
IGSS
IDSS
RDS(ON)
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID= 6.9A
VGS=4.5V, ID= 5.8A
±100
1
26 35
36 45
VSD Diode Forward Voltage
IS=1.7A, VGS=0V
0.75 1.2
DYNAMIC
Qg Total Gate Charge
11.5
Qgs Gate-Source Charge
VDS=15V, VGS=10V, ID=6.9A
2.7
Qgd Gate-Drain Charge
2.3
Ciss Input Capacitance
350
Coss
Output Capacitance
VDS=15V, VGS=0V,f=1MHz
65
Crss Reverse Transfer Capacitance
16
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
9
10
32
3.5
Notes: a. Pulse test:pulse width≦ 300us, duty cycle≦ 2%.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
pF
ns
Apr,2012-Ver4.2
02
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PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Matsuki
( matsuki )
ME4920-G mosfet
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[ ME4920-G.PDF ]
[ ME4920-G 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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