MTC7540BDH8 반도체 회로 부품 판매점
P- & N-Channel Enhancement Mode Power MOSFET
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 CYStech Electronics |
Spec. No. : C088H8
CYStech Electronics Corp. Issued Date : 2016.09.09
Revised Date : 2016.09.12
Page No. : 1/14
N- AND P-Channel Enhancement Mode MOSFET
MTC7540BDH8
BVDSS
ID@VGS=4.5V(-4.5V), TA=25°C
ID@VGS=4.5V(-4.5V), TA=70°C
ID@VGS=4.5V(-4.5V), TC=25°C
Features
• Simple drive requirement
• Low on-resistance
ID@VGS=4.5V(-4.5V), TC=100°C
RDSON(typ)@VGS=4.5V(-4.5V)
RDSON(typ)@VGS=2.5V(-2.5V)
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
14V
10.6A
8.5A
25.8A
16.3A
15.7mΩ
24.4mΩ
P-CH
-14V
-9.5A
-7.6A
-23.0A
-14.6A
21.3mΩ
32.2mΩ
Equivalent Circuit
MTC7540BDH8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTC7540BDH8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC7540BDH8
CYStek Product Specification
Spec. No. : C088H8
CYStech Electronics Corp. Issued Date : 2016.09.09
Revised Date : 2016.09.12
Page No. : 2/14
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 °C, VGS=4.5V (-4.5V)
Continuous Drain Current TA=70 °C, VGS=4.5V (-4.5V)
TC=25 °C, VGS=4.5V (-4.5V)
TC=100 °C, VGS=4.5V (-4.5V)
Pulsed Drain Current (Note 1 & 2)
BVDSS
VGS
IDSM
ID
IDM
Limits
N-channel
P-channel
10s steady 10s steady
14 -14
±8 ±8
10.6 6.8 -9.5 -6.1
8.5 5.4 -7.6 -4.9
25.8 -23
16.3 -14.6
27 -24
TA=25 °C steady state
Power Dissipation
TA=70 °C steady state
TC=25 °C
TC=100 °C
Operating Junction and Storage Temperature Range
PDSM
PD
Tj; Tstg
1.4 (Note 3)
0.8 (Note 3)
21
8.4
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 3) t≤10s
Steady state
RθJC
RθJA
6
35 °C/W
85
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
14
0.5
-
-
-
1.2
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±8V, VDS=0V
IDSS
-
-
-
-
1
25
μA
VDS=14V, VGS=0V
VDS=10V, VGS=0V , Tj=55°C
*RDS(ON)
-
-
15.7
24.4
25
37
mΩ
ID=11.8A, VGS=4.5V
ID=9.8A, VGS=2.5V
*GFS
- 10 - S VDS=5V, ID=5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
- 390 -
- 109 - pF VDS=10V, VGS=0V, f=1MHz
- 95 -
- 6.8 -
-
-
21 -
25.8 -
ns VDS=6V, ID=1A, VGS=4.5V, RG=6Ω
- 11.2 -
MTC7540BDH8
CYStek Product Specification
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제조업체: CYStech Electronics
( cystech )
MTC7540BDH8 mosfet
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