MTC4505Q8 반도체 회로 부품 판매점
P- & N-Channel Enhancement Mode Power MOSFET
|
|
 CYStech Electronics |
CYStech Electronics Corp.
Spec. No. : C439Q8
Issued Date : 2009.02.19
Revised Date :
Page No. : 1/8
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC4505Q8
Description
BVDSS
ID
RDSON(max)
N-CH
30V
10A
14mΩ
P-CH
-30V
-8.4A
20mΩ
The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• RoHS compliant package
Equivalent Circuit
MTC4505Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTC4505Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C439Q8
Issued Date : 2009.02.19
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation @TA=25°C (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Rth,ja
Limits
N-channel P-channel
30 -30
±20 ±20
10 -8.4
7.9 -6.7
30 -30
2.0
0.016
-55~+150
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
BVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
30
-
1.0
-
-
-
-
-
-
- - V VGS=0, ID=250μA
0.02 - V/°C Reference to 25 °C, ID=1mA
1.5 3.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=30V, VGS=0
- 25 μA VDS=24V, VGS=0, Tj=70°C
-
-
14
20
mΩ
ID=9A, VGS=10V
ID=5A, VGS=4.5V
14 - S VDS=10V, ID=9A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
*trr -
*Qrr -
1770
430
350
14
10
36
17
23
6
14
-
31
25
2830
-
-
-
-
-
-
65
-
-
1.2
-
-
pF VDS=25V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A, VGS=10V,
RG=3.3Ω, RD=15Ω
nC VDS=24V, ID=9A, VGS=4.5V
V VGS=0V, IS=1.7A
ns
nC
IS=9A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4505Q8
CYStek Product Specification
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: CYStech Electronics
( cystech )
MTC4505Q8 mosfet
데이터시트 다운로드 :
[ MTC4505Q8.PDF ]
[ MTC4505Q8 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
