MTC4503H8 반도체 회로 부품 판매점
P- & N-Channel Enhancement Mode Power MOSFET
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 CYStech Electronics |
CYStech Electronics Corp.
Spec. No. : C384H8
Issued Date : 2015.07.16
Revised Date : 2015.09.03
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC4503H8 BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
30V
9.4A
27A
13mΩ
17mΩ
P-CH
-30V
-7.8A
-22.5A
21mΩ
35mΩ
Equivalent Circuit
MTC4503H8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTC4503H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC4503H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384H8
Issued Date : 2015.07.16
Revised Date : 2015.09.03
Page No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 °C, VGS=10V (-10V)
Continuous Drain Current TA=70 °C, VGS=10V (-10V)
TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
TA=25 °C
Power Dissipation
TA=70 °C
TC=25 °C
TC=100 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
IDSM
ID
IDM
PDSM
PD
Tj; Tstg
Limits
N-channel P-channel
30 -30
±20 ±20
9.4 -7.8
7.5 -6.2
27 -22.5
17 -14.2
40 -40
2.5 (Note 3)
1.6 (Note 3)
21
8.4
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
6
50 (Note 3)
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
30
1.0
-
-
-
-
-
-
-
-
-
3.0
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS=30V, VGS=0V
VDS=24V, VGS=0, Tj=125°C
13
17
17
23
mΩ
ID=6A, VGS=10V
ID=4A, VGS=4.5V
6 - S VDS=10V, ID=6A
Dynamic
Ciss - 526 790
Coss
- 62 - pF VDS=25V, VGS=0V, f=1MHz
Crss - 53 -
*td(ON)
-
6-
*tr
*td(OFF)
-
-
18
29
-
-
ns VDS=15V, ID=1A, VGS=10V, RG=3.3Ω
*tf - 6 -
MTC4503H8
CYStek Product Specification
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제조업체: CYStech Electronics
( cystech )
MTC4503H8 mosfet
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