MTC4501Q8 반도체 회로 부품 판매점
P- & N-Channel Enhancement Mode Power MOSFET
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 CYStech Electronics |
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 1/10
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC4501Q8
Description
The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Applications
• Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTC4501Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTC4501Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C385Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
Pd
Tj
Tstg
Rth,ja
Limits
N-channel P-channel
30 -30
±20 ±16
7 -5.3
5.8 -4.7
20 -20
2
0.016
-55~+150
-55~+150
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
Unit
V
V
A
A
A
W
W / °C
°C
°C
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
30
-
1.0
-
-
-
-
-
*GFS
-
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
*IS -
- - V VGS=0, ID=250μA
0.02 - V/°C Reference to 25°C, ID=1mA
- 3.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=30V, VGS=0
- 25 μA VDS=24V, VGS=0, Tj=70°C
-
-
28
42
mΩ
ID=7A, VGS=10V
ID=5A, VGS=4.5V
13 - S VDS=10V, ID=7A
645 -
150 - pF VDS=25V, VGS=0, f=1MHz
95 -
6-
5.2 -
18.8 -
ns
VDS=15V, ID=1A,
VGS=10V, RG=3.3Ω, RD=15Ω
4.4 -
8.4 -
2.1 - nC VDS=24V, ID=7A, VGS=4.5V
4.7 -
- 1.2 V VGS=0V, IS=7A
- 1.67 A VD=VG=0V, VS=1.2V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4501Q8
CYStek Product Specification
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( cystech )
MTC4501Q8 mosfet
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