MTC3588G6 반도체 회로 부품 판매점
P- & N-Channel Enhancement Mode Power MOSFET
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 CYStech Electronics |
CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 1/13
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588G6 BVDSS
N-CH
14V
ID @ TA=25 °C 5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
RDSON(TYP.)
24.7mΩ(VGS=2.5V)
39.5mΩ(VGS=1.8V)
67.3mΩ(VGS=1.5V)
P-CH
-14V
-3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
88.5mΩ(VGS=-1.8V)
154.3mΩ(VGS=-1.5V)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588G6
Outline
TSOP-6
D2
S1
D1
G：Gate S：Source D：Drain
G2
S2
G1
Ordering Information
Device
Package
MTC3588G6-0-T1-G
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C102G6
Issued Date : 2016.05.03
Revised Date :
Page No. : 2/13
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
BVDSS
VGS
ID
IDM
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.
2.Pulse width limited by maximum junction temperature.
Limits
N-channel P-channel
14 -14
±8 ±8
5.4 -3.6
4.3 -2.9
20 -20
1.14
0.01
-55~+150
Unit
V
A
W
W / °C
°C
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
14
-
0.4
-
-
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
8 - mV/°C Reference to 25°C, ID=1mA
- 1.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±8V, VDS=0V
-
-
1
10
μA
VDS=12V, VGS=0V
VDS=10V, VGS=0V, Tj=70°C
17.6 25
ID=5A, VGS=4.5V
24.7
39.5
33
75
mΩ
ID=4.6A, VGS=2.5V
ID=4.1A, VGS=1.8V
67.3 115
ID=2A, VGS=1.5V
5.6 - S VDS=5V, ID=3A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
- 407 -
- 115 - pF VDS=10V, VGS=0V, f=1MHz
- 100 -
- 5-
-
-
18.8 -
49.6 -
ns VDS=10V, ID=1A, VGS=5V, RG=3.3Ω
- 30.8 -
- 6.5 -
- 0.7 - nC VDS=10V, ID=3A, VGS=4.5V
- 2.3 -
- 1 - Ω f=1MHz
Source-Drain Diode
*VSD
-
0.87 1.2
V VGS=0V, IS=5.2A
*trr
*Qrr
-
-
12
2.3
-
-
ns
nC
IF=3A, VGS=0V, dIF/dt=100A/μs
MTC3588G6
CYStek Product Specification
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제조업체: CYStech Electronics
( cystech )
MTC3588G6 mosfet
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