DMN3042LFDF 반도체 회로 부품 판매점
30V N-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
Product Summary
BVDSS
30V
RDS(ON) Max
28mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
ID Max
TA = +25°C
7.0A
6.5A
DMN3042LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
U-DFN2020-6
(Type F)
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 Per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.007 grams (Approximate)
D
G
Top View
Bottom View
Pin Out
Bottom View
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN3042LFDF-7
DMN3042LFDF-13
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
S7 = Product Type Marking Code
YM = Date Code Marking
S7 Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
2017
E
Feb Mar
23
2018
F
Apr
4
May
5
2019
G
Jun
6
2020
H
2021
I
Jul Aug Sep
78
9
2022
J
2023
K
Oct Nov Dec
OND
DMN3042LFDF
Datasheet number: DS38985 Rev. 1 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 7)
Avalanche Energy (L = 0.1mH) (Note 7)
TA = +25C
TA = +70C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMN3042LFDF
Value
30
±12
7.0
5.6
1.5
35
13
9
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
Steady State
t<10s
TA = +25°C
Steady State
t<10s
Steady State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.7
177
124
2.1
61
43
9.3
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
30
0.6
Typ
17
20
24
28
0.7
570
63
53
3.2
13.3
6.1
1.0
1.6
1.5
3.3
13.9
4.9
7.8
1.9
Max
1
100
1.4
28
32
42
50
1.2
Unit
V
µA
nA
V
mΩ
V
pF
Ω
nC
ns
ns
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 12V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.0A
VGS = 4.5V, ID = 4.0A
VGS = 3.0V, ID = 4.0A
VGS = 2.5V, ID = 4.0A
VGS = 0V, IS = 1A
VDS = 15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 15V, ID = 6.9A
VGS = 10V, VDD = 15V, RG = 3Ω,
ID = 6.9A
IS = 5A, dI/dt = 100A/μs
IS = 5A, dI/dt = 100A/μs
DMN3042LFDF
Datasheet number: DS38985 Rev. 1 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated
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DMN3042LFDF mosfet
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