SMP60N03-10L 반도체 회로 부품 판매점
MOSFET ( Transistor )
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 Vishay |
SMP60N03-10L
Siliconix
N-Channel 30-V (D-S), 150_C MOSFET, Logic Level
Product Summary
V(BR)DSS (V)
30
rDS(on) (W)
0.01
TO-220AB
ID (A)
60
D
G
DRAIN connected to TAB
GD S
S
Top View
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C
TC = 100_C
L = 0.1 mH
L = 0.05 mH
TC = 25_C
TC = 100_C
Symbol
VDS
VGS
ID
IDM
IAR
EAS
EAR
PD
TJ, Tstg
TL
Limit
30
"20
60
51
240
60
180
90
105
42
–55 to 150
300
Unit
V
A
mJ
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
RthJA
RthJC
RthCS
1.0
80
1.2
Notes:
a. Duty cycle v1%
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70280.
A SPICE Model data sheet is available for this product (FaxBack document #70525).
Unit
_C/W
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. D, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-5
SMP60N03-10L
Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 10 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 5 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VDS = 15 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 60 A
VDD = 30 V, RL = 1 W
ID ] 30 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)
Continuous Current
Pulsed Current
Forward Voltageb
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 60 A, VGS = 0 V
IF = 60 A, dlF/dt = 100 A/ms
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
30
V
0.8 3.0
"500 nA
25
mA
250
60 A
0.007 0.010
0.010 0.015 W
0.009 0.014
45 S
2600
1500
750
100
10
45
14
25
65
45
120
15
75
30
50
100
80
pF
nC
ns
60
A
240
1.6 V
160 ns
13 A
1.0 mC
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. D, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-6
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SMP60N03-10L mosfet
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