파트넘버.co.kr AM50N03-12I 데이터시트 PDF


AM50N03-12I 반도체 회로 부품 판매점

N-Channel MOSFET



Analog Power 로고
Analog Power
AM50N03-12I 데이터시트, 핀배열, 회로
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature TO-252 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
AM50N03-12I
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
30 13 @ VGS = 10V
20 @ VGS = 4.5V
ID (A)
51
41
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TC=25oC ID
IDM
30 V
±20
51 A
40
Continuous Source Current (Diode Conduction)a
IS 30 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TC=25oC PD
50
TJ, Tstg -55 to 175
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
November, 2003 - Rev. A
PRELIMINARY
1 Publication Order Number:
DS-AM50N03-12I_A


AM50N03-12I 데이터시트, 핀배열, 회로
Analog Power
AM50N03-12I
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentA
Drain-Source On-ResistanceA
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Ddrain Reverse Recovery Time
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 51 A
VGS = 4.5 V, ID = 41 A
VDS = 15 V, ID = 51 A
IS = 34 A, VGS = 0 V
VDS = 15 V, VGS = 4.5 V,
ID = 51 A
VDD = 25 V, RL = 25 , ID = 34 A,
VGEN = 10 V
IF = 34 A, Di/Dt = 100 A/uS
Min
Limits
Typ Max
Unit
1.0 V
±100 nA
1
25
uA
34 A
13
20
m
22 S
1.1 V
4.0
1.1 nC
1.4
16
5
23 nS
3
50
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
November, 2003 - Rev. A
PRELIMINARY
2 Publication Order Number:
DS-AM50N03-12I_A




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: Analog Power

( ap )

AM50N03-12I mosfet

데이터시트 다운로드
:

[ AM50N03-12I.PDF ]

[ AM50N03-12I 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


AM50N03-12D

N-Channel MOSFET - Analog Power



AM50N03-12I

N-Channel MOSFET - Analog Power