AP9936GM 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP9936GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ DC-DC Application
▼ Dual N-channel Device
▼ Surface Mount Package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
50mΩ
5A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
30
+ 20
5
4
20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200901203
AP9936GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3.9A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=15V, ID=5A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= + 20V, VDS=0V
ID=5A
Gate-Source Charge
VDS=15V
Gate-Drain ("Miller") Charge
VGS=5V
Turn-on Delay Time2
VDS=15V
Rise Time
ID=1.5A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=10Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.037 - V/℃
- - 50 mΩ
- - 80 mΩ
1 - 3V
-6-S
- - 1 uA
- - 25 uA
- - +100 nA
- 6.1 - nC
- 1.4 - nC
- 3.3 - nC
- 6.7 -
ns
- 6.4 -
ns
- 22.1 -
ns
- 2.1 -
ns
- 240 - pF
- 145 - pF
- 55 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25℃, IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.67 A
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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( ape )
AP9936GM mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics
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