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Stanson Technology |
STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
DESCRIPTION
The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as notebook computer power management and
other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6
FEATURE
D1 S1 D2
02YW
G1 S2 G2
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STC6602ST6RG
TSOP-6
02YW
※ Week Code Code : A ~ Z ; a ~ z
※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1
STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
VDSS
Typical
NP
30 -30
Unit
V
Gate-Source Voltage
VGSS
±20
±20
V
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
ID
IDM
2.8
-2.8
A
2.3 -2.1
10 -8 A
Continuous Source Current (Diode Conduction)
IS
1.25
-1.4
A
Power Dissipation
Operation Junction Temperature
TA=25℃
TA=70℃
PD
TJ
1.15
0.75
-55/150
W
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction
to Ambient
T≦10sec
Steady State
RθJA
50
90
52
℃/W
90
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1
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