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Tuofeng Semiconductor |
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS8N60 N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
主要参数 MAIN CHARACTERISTICS
ID 7.5 A
VDSS 600 V
Rdson(@Vgs=10V) 1.2 Ω
Qg 54 nC
封装 Package
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 23pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 23pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
F
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
SSS8N60
项目
Parameter
最高漏极-源极直流电压
Drain-Source Voltage
符号
Symbol
VDSS
数值
Value
JCS8N60S/B/C JCS8N60F
600 600
单位
Unit
V
连续漏极电流
Drain Current -continuous
ID
T=25℃
7.5
7.5* A
最大脉冲漏极电流(注 1)
Drain Current - pulse
(note 1)
IDM
最高栅源电压
Gate-Source Voltage
VGSS
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche Energy(note 2)
EAS
雪崩电流(注 1)
Avalanche Current(note 1)
IAR
重复雪崩能量(注 1)
Repetitive Avalanche Current(note 1)
EAR
二极管反向恢复最大电压变化速率(注 3)
Peak Diode Recovery dv/dt(note 3)
dv/dt
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above
25℃
最高结温及存储温度
Operating and Storage Temperature TJ,TSTG
Range
引线最高焊接温度
Maximum Lead Temperature for TL
Soldering Purposes
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
28 28*
±30
420
7.5
14.7
5.5
147
48
1.18 0.38
-55~+150
300
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
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