IXFA24N60X 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 IXYS |
Preliminary Technical Information
X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA24N60X
IXFP24N60X
IXFQ24N60X
IXFH24N60X
TO-263 AA (IXFA)
VDSS =
ID25 =
RDS(on)
600V
24A
175m
TO-220AB (IXFP)
G
S
D (Tab)
GD S
TO-3P (IXFQ)
D (Tab)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FMCd
Weight
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
600 V
600 V
30 V
40 V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
24
48
8
500
50
400
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 2.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2015 IXYS CORPORATION, All Rights Reserved
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
20 A
750 A
175 m
G
D
S
TO-247 (IXFH)
D (Tab)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100647B(5/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247 & TO-3P
IXFA24N60X
IXFQ24N60X
Characteristic Values
Min. Typ. Max
7 12
S
2.1
1910
1400
18
pF
pF
pF
100
330
18
29
45
15
47
11
23
0.50
0.25
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31 C/W
C/W
C/W
IXFP24N60X
IXFH24N60X
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 12A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
24
A
96 A
1.4 V
140 ns
840 nC
12 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
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IXFA24N60X mosfet
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상호 : 아이지 인터내셔날
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