DMP3036SSD 반도체 회로 부품 판매점
P-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
Product Summary
V(BR)DSS
-30V
RDS(on) max
20mΩ @ VGS = -10V
29mΩ @ VGS = -5V
ID
TC = +25°C
-18.0A
-15.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
DMP3036SSD
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (Approximate)
SO-8
Pin1
Top View
SO-8
S1
G1
S2
G2
Top View
Pin Configuration
D1
D1
D2
D2
D1 D2
G1 G2
S1
Equivalent Circuit
S2
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP3036SSD-13
SO-8
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
85
P3036SD
YY WW
14
= Manufacturer’s Marking
P3036SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
DMP3036SSD
Document number: DS37349 Rev.1 - 2
1 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DMP3036SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.3mH
Avalanche Energy (Note 7) L = 0.3mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-30
±25
-18.0
-14.3
-10.6
-8.5
-80
-3.6
-17.5
64
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.9
104
45
1.7
1.1
72
37
13
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at VGS = -5V
Total Gate Charge at VGS = -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
-30
-
-
--
- -1.0
- ±100
VGS(th)
-1.0 -1.7 -3.0
RDS (ON)
-
-
16 20
22 29
VSD - -0.7 -1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1931
-
- 226 -
- 168 -
- 10.9 -
- 8.8 -
- 16.5 -
- 2.6 -
- 3.6 -
- 8.2 -
- 14 -
- 65 -
- 31.6 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -9A
VGS = -5V, ID = -7A
VGS = 0V, IS = -1A
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A
VDS = -15V, ID = -10A
VGEN = -10V, VDD = -15V,
RGEN = 3Ω, ID = -10A
DMP3036SSD
Document number: DS37349 Rev.1 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated
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DMP3036SSD mosfet
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