HRLO125N06K 반도체 회로 부품 판매점
N-Channel Trench MOSFET
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 SemiHow |
Jan 2016
HRLO125N06K
60V N-Channel Trench MOSFET
Features
High Dense Cell Design
Reliable and Rugged
Advanced Trench Process Technology
Application
Power Management in Inverter System
Synchronous Rectification
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
60
10
12.5
14.0
Unit
V
A
Pȍ
Pȍ
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TA=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TA = 25
TA = 70
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TA = 25
TA = 70
Operating and Storage Temperature Range
60
ρ20
10
8
40
123
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJL Junction-to-Lead
Junction-to-Ambient (t10s)
RșJA
Junction-to-Ambient (steady state)
Typ.
--
--
--
Max.
24
40
75
Units
/W
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 9 A
VDS = 5, ID = 10 A
1.0
--
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ
VDS = 48 V, VGS = 0 V
VDS = 48 V, TJ = 125
VGS = ρ20 V, VDS = 0 V
60
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 30 V, ID = 10 A,
RG = 6
VDS = 48 V, ID = 10 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 10 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 10 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
--
12.5
14.0
24
2.4
15.6
17.5
--
V
m
m
S
-- -- V
-- 1 Ꮃ
-- 100 Ꮃ
-- ρ100 Ꮂ
2700
230
180
1.2
--
--
--
--
Ꮔ
Ꮔ
Ꮔ
20 --
50 --
120 --
40 --
50 --
7 --
13 --
Ꭸ
Ꭸ
Ꭸ
Ꭸ
nC
nC
nC
-- 10
A
-- 40
-- 1.3 V
40 -- Ꭸ
40 -- nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=12A, VDD=25V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡
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