HRLI43N06H 반도체 회로 부품 판매점
N-Channel Trench MOSFET
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 SemiHow |
April 2016
HRLI43N06H
60V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
Power Tools
UPS, Motor Control
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
60
140
3.6
4.6
Unit
V
A
Pȍ
Pȍ
Package & Internal Circuit
I2-PAK
G
D
S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
Single Pulsed Avalanche Energy
L=0.1mH
Power Dissipation
TC= 25
Operating and Storage Temperature Range
60
ρ20
140
100
410
211
176
-55 to +175
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.85
62.5
Units
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͧ͑͢͡
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 5, ID = 20 A
1.0
--
--
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ
VDS = 60 V, VGS = 0 V
VDS = 60 V, TJ = 100
VGS = ρ20 V, VDS = 0 V
60
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
VDS = 30 V, ID = 20 A,
RG = 10
Qg (10V)
Qg (4.5V)
Qgs
Qgd
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 30 V, ID = 20 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 20 A, VGS = 0 V
diF/dt = 300 A/ȝV
--
--
--
--
--
-- 3.0 V
3.6 4.3 m
4.6 6.0 m
42 --
S
-- -- V
-- 1 Ꮃ
-- 100 Ꮃ
-- ρ100 Ꮂ
3250
1200
50
1.6
--
--
--
--
Ꮔ
Ꮔ
Ꮔ
12 -- Ꭸ
10 -- Ꭸ
55 -- Ꭸ
15 -- Ꭸ
49 -- nC
24 -- nC
8 -- nC
9 -- nC
-- 140
-- 410
0.9 1.2
50 --
120 --
A
V
Ꭸ
nC
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͧ͑͢͡
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HRLI43N06H mosfet
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